| PART |
Description |
Maker |
| M68745L 68745L |
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3.8W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RA20H8087M11 RA20H8087M-101 |
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| D8740200GTH |
GaAs Power Doubler, 40 - 870MHz, 20.5dB min. Gain @ 870MHz, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| D8740320GTH |
GaAs Power Doubler, 40 - 870MHz, 32.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740260GT |
GaAs Push Pull Hybrid 40 - 870MHz 26.0dB min. Gain @ 870MHz 240mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| S8740220GT |
GaAs Push Pull Hybrid 40 - 870MHz 22.7dB min. Gain @ 870MHz 240mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| RA45H7687M1-101 |
RF MOSFET MODULE 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RD07MUS2B RD07MUS2B11 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
|
Mitsubishi Electric Semiconductor
|
| PXA320 |
Cost-Effective, Scalable Performance up to 806 MHz for Power-Efficient, High-End Multimedia Handsets, Embedded Solutions, and Enterprise-Class Devices
|
Marvell Technology Group Ltd.
|
| D8740320GT |
GaAs Power Doubler Hybrid 40MHz to 870MHz
|
RF Micro Devices
|
